The Growth and Characterization of GaN Films Grown with Al Pre‐Seeded AlN Buffer on SiC/Si(111) Substrates

Abstract

High quality GaN layers were grown by low pressure metal organic chemical vapour deposition on Si(111) substrates using 3C–SiC intermediate layers with AlN buffer layers. The formation of silicon nitride at the surface of 3C–SiC prevents a uniform growth of the AlN buffer. To prevent the formation of silicon nitride, we introduce an Al pre-seeding before the AlN buffer layer growth. We found that the crystal quality and surface morphology of GaN films strongly depend on the Al pre-seeding time; the crystal quality and the surface morphology of the GaN films was improved with increasing Al pre-seeding time.