Abstract
The giant magnetoresistance (GMR) effect of Co/Co2TiSn thin films with two magnet phases was observed in samples annealed in vacuum and N2(10% H2) gas atmospheres. The perpendicular magnetization curve of the films have the hysteresis loop of a typical bubble domain material. Various features of electrical resistivity at room temperature of the annealed films suggest GMR behavior. The resistivity decreases with increasing field and saturates at a field of around 2 kOe which is the same as in-plane saturation field from magnetization measurements. In the film annealed in N2 gas, the magnetoresistivity, δρ(H), is 1.43×10−7 Ω cm and the GMR is 0.18%. In the film annealed in vacuum, the δρ(H) and GMR are about 3.3×10−8 Ωcm and 0.12%, respectively. The GMR effect in annealed Co/Co2TiSn films indicates the scattering of spin polarized conduction electrons because of the antiparallel exchange coupling at the phase boundary between the two magnetic phases. The scattering process of conduction electrons at the phase boundary was modeled in relation to the magnetization process.
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