Abstract
Available information about the interaction of Ge with water in vapour and liquid form is collated and discussed. It is concluded that there is a degree of attachment of water to Ge surfaces, being greatest for the (111) face, and reducing with temperature. Solute ions in low concentration must compete with attached water molecules in order to reach the Ge surface, and could possibly aggregate within a water layer or two of the surface under applied electric fields. Ice nucleation temperatures are —5°C to —6°C for crushed Ge and close to —5°C for crushed InSb, the good nucleating properties being ascribed to a fit between the (0001) ice face and the (111) semiconductor faces.
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