Abstract
The radiation hardness of planar and 3D silicon detectors fabricated on Float-Zone and epitaxial silicon substrates is compared after exposure to neutron equivalent fluences greater than 10 15 cm −2. Following irradiation, the Signal Efficiency (SE), expressed as the ratio of the maximum signal after irradiation divided to the maximum signal before irradiation, is shown to depend only on the geometrical distance, L, between the p + and n + electrodes. The Signal Efficiency is independent of the silicon substrate used for the various detectors. A formalism describing the dependence of Signal Efficiency on L is derived and used to fit the data. The Signal Efficiency dependence on inter-electrode distance L and the fluence φ follow the same inverse proportionality law.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
