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Abstract
The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10−4 Torr. Continuous and real-time detection of the atomic oxygen was achieved by atomic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4×1018 atoms/cm2 s and dissociation efficiencies of around 100% were obtained.
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