The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination

Abstract

ABSTRACTWe report, for the first time, on the stretched-exponential time dependence of the generation and bleaching of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to the sub-bandgap illumination at room temperature in vacuum. We also propose a mechanism which we believe is responsible for the generation and bleaching of the positive charge in the nitride films.