Abstract
We discuss the amplitude of the random telegraph signals (RTS's) observed in small-area MOSFET's. For these signals, we show that the effective number of carriers removed from the channel asymptotically approaches unity as the inversion-layer number density increases. Based on the investigation of two complex RTS's, we suggest that structural rearrangements of oxide defects, without any change in charge state, can modulate the channel conductivity.
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