Abstract

An evaluation structure about gate metal degradation of pseudomorphic High-Electron Mobility Transistor (PHEMT) is designed in this study. It realized separated evaluation of the resisted electromigration levels between the evaporation metal Ti/Pt/Au and the plating metal Au in gate metal structure. There are 4 multiple disparities between their resisted electromigration levels. And the resisted electromigration levels of electrioplating Au in gate metal Ti/Pt/Au-Au structure is the weakest. The Ti/Pt/Au-Au electromigration life under constant current stress and high temperature stress test has been obtained, evaluated the stability of PHEMT gate metal, provided reference and basis for the PHEMT power components designers to improve the stability of gate metal structure.

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