Abstract

A novel analyzing instrument, the Gas Ion Probe (GIP), has been developed. It extends the applicability of the established SIMS method to the measurement of rare gases. The GIP technique allows determination of gas concentration profiles in solids on surfaces with ∼100 μm lateral dimensions and depth resolution of ∼100 Å. The principles and the technical realization of the GIP as well as measurements on lunar and artificially implanted samples are described.

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