Abstract
The temperature dependences of the diffusion and recombination saturation currents and the energy gap have been obtained for a GaAs photoelectric converters. Saturation currents by IV characteristic analysis, and the energy gap by electroluminescence peak position have been determined. It has been shown that the relationship between saturation currents and energy band gap is characterized by the only parameter Jz (current invariant). At the temperature range of 100 -420 K this parameter does not depend on the temperature.
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