Abstract
GaAlAsSb quaternary alloys and GaAlSb ternary alloys have been grown by liquid phase epitaxy (LPE) at 550°C and 450°C, respectively. The material compositions and epitaxial structures are suitable for fabricating photodiodes sensitive in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.0-1.8 \mu</tex> m wavelength range. Various avalanche photodiode structures fabricated in these materials are discussed. The ion implanted GaAlAsSb APD's exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps. The heterojunction GaAlAsSb APD's have a gain of 40, 92 percent quantum efficiency, and a FWTM of 150 ps. The only remaining material problem which limits the performance of these devices is the high-surface leakage current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
