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Abstract
A new p-n photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga0.47In0.53As grown lattice matched on InP substrates by LPE. These detectors display avalanche gain and dark current as low as 2×10−9 A. Measurements of the speed of response at 1.06 μm have shown a detector response time as fast as 250 psec.
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