Abstract
Colossal permittivity materials exhibit extreme polarization in an applied electric field, providing applications in electronics and energy transmission. Understanding the atomic-scale mechanism behind colossal permittivity remains a challenging task and is key to optimizing materials with this property. The fundamental mechanism of colossal permittivity is reported and, using CaCu3 Ti4 O12 as an example, it is attributed to the formation of an unusual metallic interface between the grain and grain boundary materials (CaCu3 Ti4 O12 and Cux O (x = 1, 2), respectively), not created by oxygen vacancies as is normally the case in oxide materials. This metallic layer around the grain forms confined shells of charge that pool on one side when under an applied field, which results in colossal permittivity. A route towards enhancing colossal permittivity is explained by means of manipulating the interface properties, as well as altering sample geometries. A methodology to artificially engineer colossal permittivity metamaterials is also shown.
Highlights
Colossal permittivity materials exhibit extreme polarization in an applied descriptions cannot simultaneously account for high loss factors, low breakdown voltelectric field, providing applications in electronics and energy transmission
The fundamental mechanism of colossal permittivity is reported and, using CaCu3Ti4O12 as an example, it is attributed to the formation of an ries,[11] nor how colossal permittivity scales with system size.[4,12,13,14,15,16,17]
Using CCTO as an example, we show that the grain (IBLC).[4,5,6]
Summary
TITLE The Fundamental Mechanism Behind Colossal Permittivity in Oxides (article) AUTHORS Taylor, NT; Davies, FH; Davies, SG; et al JOURNAL Advanced Materials DEPOSITED IN ORE 22 October 2019. COPYRIGHT AND REUSE Open Research Exeter makes this work available in accordance with publisher policies. A NOTE ON VERSIONS The version presented here may differ from the published version. You are advised to consult the published version for pagination, volume/issue and date of publication
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