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Abstract
Chemical mechanical planarization (CMP) makes it possible to fabricate the reliable and speedy Cu interconnection with high integration. Through general Cu CMP process causes the surface defects, such as corrosion, dishing, and erosion, in high acidic and basic conditions, extensive research about CMP in neutral condition is needed. It is well known that the removal rate of Cu with neutral pH slurry is relatively lower than acidic and basic slurries. To improve the removal rate in neutral pH condition, complexing agents which dissolve Cu surface by complexing with Cu metal or Cu oxide have been used. In the present study, we investigate the effective functional group and complexing agent in neutral pH condition.
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