Abstract
AbstractDifferent aspects of interfacial interactions during the growth of epitaxial oxides are illustrated in a BaxSr1-xTiO3/YBa2Cu3O7-x/CeO2/Y-ZrO2/Si/Al2O3 heteroepitaxial multilayer. The effect of chemical interaction, interdiffusion, epitaxial strain and thermal strain are exemplified. It is shown how buffer layers can be used to compensate for otherwise detrimental interactions. Considerations necessary for annealing following the film depositions are also addressed. Even if the described structures are specific for this system, similar considerations need to be made for other oxide systems as well. The present description can provide help to identify suitable material combinations.
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