The frequency spectrum of reciprocal capacitance and its derivative in MOS systems

Abstract

The frequency spectrum of reciprocal capacitance and its derivative in an MOS-C have been discussed on the basis of a single-energy model, distributed-energy model and the influence of random fluctuations of charge. The amplitude and position of the spectrum peak are related to the density and the time constant of the interface states, respectively. A constant current-harmonic technique was developed to measure directly the reciprocal capacitance, its derivative and the surface potential of semiconductor. The energy distribution of both the densities and the time constants of interface states at the SiSiO 2 interface were determined simultaneously from the frequency spectrum. The experimental results are consistent with theoretical calculations.