Abstract
The low temperature epitaxial growth of CdxHg1-xTe using a new photo-deposition process is described. Vapour reactions can lead to the serious problem of homogeneous nucleation which causes a dust to be deposited. However, this paper describes how these vapour reactions can be controlled to yield high quality epitaxial material. Control can be achieved by increasing the free alkyl radical concentrations and results are presented on using an additional alkyl, dimethylmercury (Me2Hg) as a free radical source. Evidence for free radical reactions was obtained using a novel mass spectrometry approach and from this evidence possible reaction paths are described. A theoretical model is used to calculate the free radical and metal atom concentrations for the example of Me2Cd dissociation. It is shown that by using helium carrier gas rather than hydrogen (highly quenched free radical case), the methyl radical and cadmium vapour concentrations are 104 lower, hence less probability of homogeneous nucleation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
