Abstract
Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
