Abstract
The Ta69N31 and Ta47N53 nanocrystalline films were synthesized by using magnetron sputtering. As a result of an increase of film thickness due to increasing deposition time from 50 s to 320 s, the transformation of Ta2N hexagonal phase into hexagonal TaN and the reduction of film density from 15.63 g/cm3 to 14.10 g/cm3 are observed. Nanocrystalline film Ti57N43 with thickness of 75 nm and density of 5.21 g/cm3 was synthesized. A crystalline Ti phase, amorphous TiN or textured TiN phases in this film were not observed. The increase in film density from 4.19 up to 5.21 g/cm3 was achieved by increasing of ratio of gas flow rates N/Ar from 0.139 to 1.8. A contact system of the solar cell with the Ti57N43 diffusion barrier was formed by using photolithography process.
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