Abstract
k-Resolved inverse photoemission spectroscopy (KRIPES) measurements are reported for the epitaxial system CaF 2/Si(111) at low coverage, in the submonolayer range.CaF 2 was deposited on H-passivated Si(111) surfaces at room temperature and subsequently annealed at 800° C. A 3×3R30° reconstructed is observed and Ca is assumed to be bonded to three Si atoms in the threefold coordinated T 4 or H 3 sites. KRIPES spectra show a well-resolved peak at about 1.3 eV above the Fermi level. This peak is attributed to emission from antibonding states resulting from the interaction between the Ca 4s and Si 3p orbitals. The energy dispersion of this interface state was recorded along the ΓM′ and ΓK′ directions of the reconstructed surface Brillouin zone. These results are interpreted in the framework of the general scheme proposed in the literature for describing the CaF 2/Si(111) interface formation.
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