The formation of NiSi from Ni 2Si studied with a platinum marker

Abstract

A 75 Å platinum film was electron gun deposited onto a 1200 Å nickel film on 〈100〉 silicon. With heat treatment at about 370 °C Ni 2Si forms first, and some platinum diffusing through the Ni 2Si to accumulate on the Ni 2SiSi interface will act as a marker for the diffusing species during the following transformation from Ni 2Si to NiSi. The position of the marker was studied by 2 MeV backscattering. The data are in agreement with a model in which the NiSi grows at both the NiSiSi and the NiSiNi 2Si interfaces