Abstract
Negative ion formation as a result of the electron bombardment of silicon tetrafluoride and carbon tetrafluoride has been studied as a function of the electron energy. A vertical rise to maximum cross-section at threshold is a feature of the ionisation processes for several ions formed by silicon tetrafluoride. A value of ∼2.2 × 10 −10 molec −1cm 3sec −1 has been estimated for the rate constant of the reaction: ▪
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Mass Spectrometry and Ion Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
