Abstract
AbstractThe formation of near surface SiGe layers by means of combined high dose Ge ion implantation and flash lamp annealing will be addressed. Furthermore, we show that the formation of an undesirable facetted liquid/solid interface, which is well known for pulse melting in the millisecond time regime, is less pronounced due to the decreasing melting temperature of Si with increasing Ge concentration at the SiGe/Si interface. A dislocation network, which is observed by using transmission electron microscopy, is expected to play an important role to form these thin SiGe layers. We will demonstrate the depth profiles of Ge by Rutherford backscattering spectrometry and discuss the concerned mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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