Abstract
Conditions for ion sputtering of a PbSe/CaF2/Si(111) epitaxial system in high-density inductively coupled plasma of high-frequency low-pressure discharge in argon have been established that ensure the formation of submicron-sized hollow lead structures on a lead-selenide surface. The surface was plasma-treated for time periods within 60–240 s at low energy (20–30 eV) of Ar+ ions, which is close to their sputtering threshold energy. The properties of the obtained material were studied by the techniques of scanning electron microscopy and energy-dispersive X-ray microanalysis. It is shown that the characteristic size, shape, and density of surface structures can be varied within broad limits depending on the time of plasma treatment and temperature of the material surface. Physical processes responsible for the formation of hollow lead structures under the proposed conditions of plasma sputtering are considered.
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