Abstract
Much recent attention has been paid to elevating the barrier height of contacts to InP and In0.53Ga0. 47As via the formation of a thin, intermediate layer between the semicon-ductor and a conventionally deposited, highly conductive contact layer. Here, we report on the use of thin (∼200A) excimer laser photodeposited Cd as an interlayer between these semiconductors and Au overlayers in order to raise the barrier height of the re-sulting diodes. Current-voltage measurements of ideal Schottky diodes fabricated using this process yield barrier heights of 0.70 eV and 0.55 eV to InP and In0.53Ga0. 47As, re-spectively. The photodeposition process has been integrated with conventional clean room processing resulting in Au/Cd/In0.53Ga0. 47As transistors with high transconductances (∼200 mS/mm) and operating frequencies (f max ∼ 30 GHz). X-ray photoelectron spec-troscopy of thin Cd photodeposits on InP shows that the process produces an interfacial (∼10A thick) Cd-InP reaction zone covered by metallic Cd.
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