Abstract
This study was directed toward exploring the relationship between the implant conditions and the depth and nature of the amorphous layers generated in silicon. High dose implants of As and P were used to generate buried ane surface amorphous layers at slightly higher than room temperature. The amorphous layer depths were measured and the depth-fluence and depth-energy relationships were compared with Brice's anfiysis. It was found that good fits weri obtained for a threshold damage density of 2.5 x 10<sup>20</sup> keV cm<sup>-3</sup> for As and 1.0 x 10<sup>21</sup> keV cm<sup>-3</sup> for P. Phosphorus ion implantations exhibted a greater tendency to generate buried amorphous layers as well as to generate amorphous layers which included a smaller fraction of the total fluence than was found for As ion implantations.
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