Abstract
In this work the electrical properties of Ni and Ni2Si contacts on n-type 4H-SiC were correlated to the strong structural changes at the contact/SiC interface upon annealing. We can conclude that only δ-Ni2Si grains play a main role in determining electrical transport properties of the Ni-based ohmic contacts to n-SiC. It is presumed that a recrystallization and texturization of δ-Ni2Si phase on (0001)SiC-surface during high temperature annealing (> 900°C) contributes to the change of barrier heights, as well as specific contact resistance of contacts.
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