Abstract
We report the formation of sodium rich amorphous secondary phases in the absorber layer of Cu(In,Ga)Se 2 solar cells and discuss their potential impact on cell performance. We find that increasing CIGS growth temperatures results in the formation of progressively larger sodium rich, Cu poor amorphous secondary phases at the CIGSMo interface, clearly distinguishable from CIGS in compositional analysis of the CIGS backside and in cross section. We observe a sharp decline in performance (Voc) when penetration depth of these phases into the CIGS absorber layer exceeds 0.5 microns. We further observe a negative correlation between the penetration depth of secondary phases into CIGS and activation energy, indicating sensitivity of device performance to changes in microstructure in the back portion of the absorber layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
