Abstract
The authors report an independent-electron model calculation of the L2,3 VV Auger lineshape for the ideal Si(100) surface with oxygen impurities incorporated at different positions with respect to the surface. The L2,3 VV Auger lineshape is compared with experimental spectra measured during the first stages of oxidation of a-Si. The Auger lineshape obtained for an oxygen monolayer over the Si(100) surface in a bridging configuration compares well with experimental spectra.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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