Abstract
High ohmic polysilicon which is used as quench resistor in conventional Silicon photomultipliers (SiPMs) turns out to be an absorber for light and is one of the most cost and yield driving technological issues. The silicon photomultiplier is becoming a very good candidate for the replacement of conventional photomultiplier tubes and thus the development of these devices is very striking. We have proposed a new detector concept which has the quench resistor integrated into the silicon bulk avoiding polysilicon resistors. The quenching mechanism has been demonstrated in a proof of principle production performed in house. The first prototypes have been fabricated (second production run) and allowed testing of the device performance. The results from the first measurements will be presented. Based on these results the inherent advantages and drawbacks compared to standard SiPMs will be discussed.
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