The First GaAs Fully Integrated Microwave Receiver for DBS Apllcations at 12 GHz

Abstract

Individual monolithic chips fulfilling each function of a 12 GHz DBS receiver have been already demonstrated by LEP (1) and other laboratories (2) (3) (4). For the first time, a fully integrated receiver comprising 12 GHz low noise amplifier, filter, mixer, local oscillator and IF amplifier on a single GaAs chip, is presented. The technology includes the use of Czochralski grown semi-insulating substrates, ion implanted active layers, .7 μm gate length self-aligned FETs, localised growth of lines, interdigital and Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> MIM capacitors, GaAs resistors and via holes. The conversion gain is 25 dB ± 3 dB with 4.5 dB noise figure in the 11.7 - 12.5 GHz band but the receiver shows a 34 dB conversion gain capability. The chip size is 2.5 × 2.5 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .