Abstract
BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T -gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka -band through W -bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of High Speed Electronics and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
