The field, time and fluence dependencies of trap generation insilicon oxides between 5 and 13.5 nm thick

Abstract

Trap generation in oxides between 5 and 13.5 nm thick hasbeen measured as a function of the oxide electric field, stresstime and electron fluence during constant-voltage stresses. Itwas found that the trap generation measured under all stressconditions and for all thicknesses of oxides could be describedby a single Eyring equation independent of stress polarity orsubstrate type. This Eyring formulation for the trap generationwas used to support the electric field (E-model) of oxidebreakdown. The field-dependent activation energy obtained fromthe trap generation data predicted both the ultimate fieldstrength of silicon oxide and a field-dependent breakdownactivation energy very close to that observed for long-time,low-field breakdown measurements. The field acceleration of trapgeneration was found to be significantly different from that ofbreakdown because of the sublinear time dependence of trapgeneration.