Abstract
AbstractCu‐doped ZnO films were deposited by direct current magnetron sputtering at room temperature in an atmosphere of argon and oxygen. The properties of Cu‐doped ZnO films were characterized and their field emission was studied. The field emission is related to the defect energy levels of Zn interstitials. Cu doping can weaken the field emission by reducing the number of Zn interstitials, deteriorating the crystalline quality and forming electron traps. The content of Cu has to be carefully controlled to achieve a field emission with a large current density and a low threshold voltage.
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