Abstract
The effective spin mixing conductance Gmixeff in WxMo1−x (WMo)/Y3Fe5O12 (YIG) heterostructure has been studied by the measurements of electron spin resonance and spin pumping technique which are based on the ferromagnetic resonance (FMR). It is interesting to find that the FMR linewidth for both YIG single layer and WMo/YIG heterostructures shows twofold and fourfold symmetry contributions although Gmixeff exhibits isotropic feature. The Gmixeff and resistivity ρ present a maximum and minimum value at x = 0.42 for WxMo1−x/YIG heterostructures, respectively, which could be ascribed to the complex phase constituents of the alloy films. This work emphasized that the consistent measurement orientation of YIG single layer and WMo/YIG heterostructures should be strictly obeyed to get the accurate Gmixeff owing to the anisotropic feature of in-plane FMR linewidth, which has always been ignored. Proper alloyed Mo could adjust the spin current related phenomenon of W based alloys, to achieve the high efficiency of spin current production from the large effective spin mixing conductance.
Highlights
The production and detection of spin current in normal metal (NM) /ferromagnetic (FM) heterostructure attract much attention owing to its negligible Joule heat and higher energy efficiency in spin electronics
The transmission and injection efficiency of the spin current across the interface from FM to NM is governed by the effective spin mixing conductance Gemffix, which is one of the most important parameters related to the spin current transport.[7]
We investigated Gemffix in the WxMo1 x (WMo, 15 nm)/YIG (80 nm) system by ferromagnetic resonance (FMR)
Summary
The production and detection of spin current in normal metal (NM) /ferromagnetic (FM) heterostructure attract much attention owing to its negligible Joule heat and higher energy efficiency in spin electronics. The out-of-plane anisotropy of spin mixing conductance of NM/YIG heterostructures has been studied theoretically and experimentally.[9,10]. For most of the spin current phenomena, such as spin pumping and spin Seebeck effect, the magnetic field is applied in the film plane, indicating that the in-plane FMR linewidth is needed to deduce the in-plane Gemffix. We investigated Gemffix in the WxMo1 x (WMo, 15 nm)/YIG (80 nm) system by ferromagnetic resonance (FMR) Both the resonance field and FMR linewidth measured via electron spin resonance and spin pumping technique exhibit in-plane anisotropy in YIG single layer and WMo/YIG bilayer, whereas the effective spin mixing conductance is isotropic. Our present work applies a precise way to study the effective spin mixing conductance, and provides the useful information of WMo for the application of spin electronic devices
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