Abstract
The work examines the features of the magnetotransport and magnetooptical properties of a GaAs structure with a Mn δ-layer located near an In0.25Ga0.75As/GaAs quantum well with high charge carrier mobility. It is shown that in the initial structure, conduction occurs predominantly in the quantum well region, that leads to the dominance of magnetotransport phenomena of a Lorentzian nature (ordinary Hall effect and positive magnetoresistance). After suppression of the conduction channel through the quantum well using ion irradiation, an anomalous Hall effect and negative resistance are observed. It has been established that the experimental magnetic field dependences of the Hall resistance in ferromagnetic nanostructures with multiple conduction channels may not reflect the real magnetic properties of the structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
