Abstract
Abstract The features of electro-optical memory effect (“stored” electroluminescence) for 1.54 μm electroluminescence of an Er-doped Si diode have been investigated. It is shown, that excitation mechanism for the stored electroluminescence is impact excitation of Er3+ ions by the electrons, released from deep traps. High excitation efficiency for stored electroluminescence has been demonstrated (500 times higher compared to forward bias electroluminescence). Optical excitation of “stored” electroluminescence has been demonstrated with band-to-band illumination instead of forward bias injection pulse.
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