Abstract
The feasibility of combining silicon and magnetic bubble technologies is demonstrated in this paper. Functional MOSFETs have been fabricated on top of bubble films coated with 1 μm thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.
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