Abstract
A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT.
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