The fast neutron response of 4H silicon carbide semiconductor radiation detectors

F.H Ruddy,J.G Seidel,A.K Agarwal,M.K Das,Sei-Hyung Ryu Sei-Hyung Ryu,A.R Dulloo

doi:10.1109/tns.2006.875151

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

F.H Ruddy, J.G Seidel + Show 4 more

https://doi.org/10.1109/tns.2006.875151

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Journal: IEEE Transactions on Nuclear Science	Publication Date: Jun 1, 2006
Citations: 90

Affiliation: Cree (United States), Westinghouse Electric (United States)

#Spl Alpha #Fast Neutron Response + Show 8 more

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Abstract

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the /sup 28/Si(n,/spl alpha//sub i/) reaction set of six energy levels in the product /sup 25/Mg nucleus, and pulse height defect differences between the observed /sup 12/C(n,/spl alpha//sub 0/)/sup 28/ Si(n,/spl alpha//sub i/) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.

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