The far infrared absorption spectra of bound excitons in silicon

Abstract

The first application of Fourier transform infrared spectroscopy to the measurement of the odd-parity excited states of a bound exciton is described. These results have reversed the prevailing model for this particular center, and allowed the even-parity excited states to be identified as well. All of these excited states can be put into excellent correspondence with acceptor states, providing the best existing confirmation of the pseudo-donor/pseudo-acceptor model of isoelectronic bound exciton states. Possible refinements of the technique are discussed, along with some suggested areas for further studies.