Abstract
Subband states in n-inversion layers on narrow gap semiconductors are resonances due to the Zener coupling to the continuum of the bulk valence band. Thus excitation between subband states resembles the autoionization process of atomic physics described long ago by Fano. Starting from Kane's model for narrow gap semiconductors to describe the subband states we map the problem onto the Fano-Anderson Hamiltonian by applying a Schrieffer-Wolff transformation. This problem is solved self-consistently using an analytical surface potential. We calculate the relative transmission rate Δ T(ω) T(ω) for inversion layers on narrow-gap Hg 1− x Cd x Te and discuss our results in comparison with experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.