Abstract
Silicon-based silica waveguide (SiO 2/Si) devices have huge applications in optical telecommunication. SiO 2 up to 25-μm thick is necessary for some passive SiO 2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO 2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO 2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO 2 on silicon substrates from cracking, and 25 μm thick silicon dioxide layer has been obtained.
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