Abstract
The photo-stimulated diffusion of Ag in a-germanium sulfide is studied to obtain low relief resist masks for the purposes of diffractive optics. The thickness of the photodoped layer is found to be proportional to the illumination energy. An average chemical composition of the photodoping product, reproducible and constant in all photodoped areas is observed. This indicates the occurrence of a stoichiometric reaction as well as a step-like mechanism for the diffusion of Ag into the chalcogenide.
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Schedule a callMore From: Journal of Materials Science: Materials in Electronics
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