Abstract
Abstract We present the results of a resistivity calculation for amorphous Mg70Zn30 using the Faber-Ziman theory of electrical transport, together with experimental X-ray structure factor data. Percus-Yevick hard sphere partial structure factors are scaled to be consistent with experimental X-ray structure factor data and are then used in the theory. A Debye model gives the temperature variation of the partial structure factors. Calculations are done for both Ashcroft empty-core pseudopotentials and T-matrices. The correct magnitude for the resistivity and sign for its temperature coefficient are found. Use of the Ashcroft pseudopotential gives the correct room temperature composition dependence of the resistivity. Use of the t-matrix elements gives the correct temperature dependence of the resistivity. Neither is capable of explaining both the temperature and composition dependence.
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