Abstract
The effect of ∼3% of silicon additive on the energy spectra of selenium and tellurium impurities in germanium is studied. The photoconductivity spectra are measured at 80 K in a spectral range from 2.5 to 5 μm. Narrow lines corresponding to the excited states of chalcogen ions are observed against the background of the extrinsic-photoconductivity band. It is found that the spectrum of excited states is not affected by silicon at the concentration used. An increase in the energy gaps between the conduction band and impurity states of the chalcogens is detected.
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