Abstract
Authors propose new methodic for GaN field transistor input gate capacitance extraction based high-frequency S-parameters measurement and transmission line theory. Input gate capacitance was determined for GaN device (Lg = 0.25 mkm, W = 160 mkm) using proposed methodic for different operating modes at GHz band. This paper contains the dependences of the input capacitance as function of drain voltage (1.0—20.0 V) at 15.0 GHz for Vgs = —3.0 V. It was pointed that input capacitance is decreasing: 460 fF to 340 fF. This capacitance was measured using time-domain reflectometry approach in the same operating modes. Measured results were compared.
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