Abstract
The external photoeffect was measured on AsI3, SbI3 and BiI3 crystals grown in the gaseous phase from very pure parent materials. The energy necessary for transferring an electron from the top of the valence band to the zero energy level was determined from the position of the long wave-length threshold of photoemission in the first approximation. This energy was approximately the same for all Vb metal iodide crystals, i.e. 5.8 eV. The electron affinities of crystals were determined from the known forbidden band width and from the results of measurements, and a simple band scheme of the crystals was proposed.
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