Abstract
The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.
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