Abstract
The experimental results of a study of the exoemission of germanium and silicon following irradiation and mechanical processing are given. An analysis of the data obtained shows the correlation between the exoelectronic emission and the defects in the surface layers of the semiconductor. The relationships obtained are useful for understanding the mechanism of exoemission, as well as for the application of the exoemission method for estimating the physical condition of surface layers which are damaged as a result of mechanical action or radiation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
